SiO2/Al2O3/HfO2 Selective Buried Oxide Layer (SELBOX) Engineering and Its Influence on 20 nm n-MOSFET
Electrical Engineering Technical Journal
Doi: https://doi.org/10.51173/eetj.v3i1.29
Short channel effects (SCEs) of nano-scaled n-MOSFET are solved by various techniques, one of which is the Selective buried oxide layer ( ...


